Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit.

نویسندگان

  • J Van Campenhout
  • P Rojo Romeo
  • P Regreny
  • C Seassal
  • D Van Thourhout
  • S Verstuyft
  • L Di Cioccio
  • J-M Fedeli
  • C Lagahe
  • R Baets
چکیده

A compact, electrically driven light source integrated on silicon is a key component for large-scale integration of electronic and photonic integrated circuits. Here we demonstrate electrically injected continuous-wave lasing in InP-based microdisk lasers coupled to a sub-micron silicon wire waveguide, fabricated through heterogeneous integration of InP on silicon-on-insulator (SOI). The InP-based microdisk has a diameter of 7.5 mum and a thickness of 1 mum. A tunnel junction was incorporated to efficiently contact the p-side of the pn-junction. The laser emits at 1.6 mum, with a threshold current as low as 0.5 mA under continuous-wave operation at room temperature, and a threshold voltage of 1.65 V. The SOI-coupled laser slope efficiency was estimated to be 30 muW/mA, with a maximum unidirectional output power of 10 muW.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Hybrid III-V and IV lasers and amplifiers

Silicon evanescent lasers and amplifiers have been demonstrated utilizing low temperature wafer bonding technology. This approach enables the creation of high performance, small footprint active devices on silicon for photonic integrated circuits. Introduction Photonic integration has progressed greatly in realizing various functions for optical interconnects as well as long haul communication ...

متن کامل

Continuous-Wave Electrically Pumped 1.55- m Edge-Emitting Platelet Ridge Laser Diodes on Silicon

We report the successful integration on silicon of small footprint, low-threshold electrically pumped edge-emitting lasers by a new approach incorporating microcleaving technology to produce 6m-thick platelet lasers with cleaved facets, microscale pick. and place assembly to position them on the substrate, and diaphragm pressure solder bonding to attach/connect them permanently in place. InP-ba...

متن کامل

Design and fabrication of type-II InP-based lasers and photodetectors integrated on SOI waveguide

We present the design and fabrication of 2 μm wavelength range type-II InP-based lasers and photodetectors integrated on a silicon photonic circuit. “W”-shaped type-II InGaAs/GaAsSb quantum wells are used as active region in the laser and photodetector structures. In order to achieve high efficient mode coupling, a taper structure in both the III-V waveguide and silicon waveguide is used. An an...

متن کامل

SIlicon Photonic Devices for Optoelectronic Integrated Circuits

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission....

متن کامل

Optics Express Pre-Print Electrically pumped hybrid AlGaInAs-silicon evanescent laser

An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Optics express

دوره 15 11  شماره 

صفحات  -

تاریخ انتشار 2007